粉体行业在线展览
粉体行业在线展览
碳化硅基氮化镓外延片
直接联系
中电化合物半导体有限公司
浙江
面议
中电化合物
碳化硅基氮化镓外延片
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Standard Layer Specifications
Layer name | Discription | Thickness | Comment |
Substrate | 100 or150 mm | 500±25 μm | Beveling or Flat Orientation |
Buffer | Doping iron | 2±0.5 μm | Can be customized |
GaN channel | GaN | 200nm | Can be customized |
AlN insert | AlN | 0.5-1.5nm | Can be customized |
Barrier | AlGaN(25%Al) | 20nm | Can be customized |
Cap | GaN | 2nm | SiN cap available upon request |
Electrical Specifications
Parameter | Measurement | Units | Target |
Electron Mobility | Hall | cm2/V.s | >1600 |
Sheet charge Density | Hall | /cm2 | >8E12 |
Sheet Resistivity | Eddy current | Ohms/sq | <450 |
Sheet Resistivity uniformity | Eddy current | 55 point | <3% |
surface Topography | AFM | nm@5*5µm2 | <0.5 |
TTV | um | <5 | |
Bow | um | < 5 0 | |
Breakdown voltage | Gate test | V | >120 |
