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RKD Elite Etch蚀刻酸解封装置集成了许多的工程创新。采用优质级碳化硅加工的整体式蚀刻头组件具有优异的耐酸性,再加上活性氮气体监测和净化系统这一整体的设计,降低了开封完成后残留在蚀刻头上酸的冒烟情况。选择单片碳化硅也可以缩短升温时间。
蚀刻头使用低热质量的设计。其他制造商使用高热质量设计和复杂可互换的组件如可移动的蚀刻头插入,具有不可靠的性能特点。我们简单但有效的设计大大减少了蚀刻头的清洗和周围堵塞的情况。
设备限制鼻压头是手动下压,是专为大量的使用所设计。鼻压头通常缩回,只在安全盖完全关闭后延伸。RAM的鼻子垂直运动的固定装置的蚀刻头从而消除或包或夹具的运动。
The Elite Etch Cu ESD 7200 model incorporates critical ESD protection circuitry, thereby eliminating the potential for incremental ESD damage to fragile packages during decapsulation. In traditional non-conductive PTFE, a charge may build up on the inner surface of the acid line tubing and any residual electrical charge cannot be neutralized. If the charge exceeds the dielectric strength of the PTFE, dielectric breakdown occurs. ESD hazards associated with PTFE are eliminated in this system by the use of electrically dissipative PTFE.
The Elite Etch Cu ESD 7200 is equipped with a conductive ram nose connected to a high impedance resistor network to aid in ESD mitigation during decapsulation. The plastic encapsulated IC itself is of particular concern to justify working with a static-free environment. The solution is an electrically isolated yet dissipative ram nose assembly combined with the electrically functional PTFE. These components ensure that the process of decapsulation eliminates all ESD risks within the part being opened. The system is equipped with two ESD panel mounted sockets and circuitry for the attachment of ESD tweezers and a wrist strap. The wrist strap can be worn to mitigate ESD problems when handling a decapsulated package- including removal of the part from the decapsulator, rinsing, or drying.
Etcher Unit | Height: 300 mm (13 in) |
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Width: 190 mm (7.5 in) | |
Depth: 305 mm (12 in) | |
Bottle Assembly | Height: 254 mm (10 in) |
Width: 280 mm (11 in) | |
Depth: 127 mm (5 in) | |
Weight | Approx. 16 kg (35 lb) |
Power Source | 90 to 250 VAC, 50 to 60 Hz (4 amp) |
Acid temp. range | 10° to 250° C |
Acid temp. set point | 1° C ± 1% of setting |
Etch cavity (up to) | 22 mm x 22 mm (30 mm diagonal) |
Choice of Acids | fuming nitric acids, mixed fuming nitric and sulfuric acids, or fuming/concentrated sulfuric acid |
Acid Mix Ratios | (nitric to sulfuric ratios) 9:1, 6:1, 5:1, 4:1, 7:2, 3:1, 5:2, 2:1, 3:2, 1:1, 1:2, 1:3, 1:4, 1:5 |
Post Etch Rinse Options | sulfuric acids, fuming nitric acids, mixed acids, or no rinse |
Etch Times | 1 to 2,400 seconds in 1 second increments (1 seconds to 40 minutes) dynamic (real time) adjustments of etch time |
Etchant Volume Selection | 1 to 8 ml per minute - for all acids & acid mixes |
Etch Delivery Functions | pulsed or Reciprocal Etch Acid Pulse (REAP) for lower acid consumption |
Operator Program Storage | 100 programs stored to nonvolatile memory |
Ambient Temperature Range | 15° to 26° C |
Ambient Humidity | 0 to 70% non-condensing |
Warranty | most comprehensive and inclusive warranty in industry (ask for full details) |